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Trap-centers of self-interstitials in silicon

✍ Scribed by H. Lefèvre


Publisher
Springer
Year
1980
Tongue
English
Weight
973 KB
Volume
22
Category
Article
ISSN
1432-0630

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Self-interstitials and related defects i
✍ Yu.V. Gorelkinskii; Kh.A. Abdullin; B.N. Mukashev; T.S. Turmagambetov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 211 KB

Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si-AA12 defect. Si-AA12 reveals close correlations with DLTS E1 ¼ E c À0.39 eV minority trap. Impurity interstitials or selfinterstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i )