Self-interstitials and related defects in irradiated silicon

✍ Scribed by Yu.V. Gorelkinskii; Kh.A. Abdullin; B.N. Mukashev; T.S. Turmagambetov

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 211 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.115

✦ Synopsis

Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si-AA12 defect. Si-AA12 reveals close correlations with DLTS E1 ¼ E c À0.39 eV minority trap. Impurity interstitials or selfinterstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i ) or selfinterstitial-oxygen complex (Si i -O i ), appear upon thermal annealing at 280-350 K and especially under injection at 77 K of Si-AA12 and E1 state. Strong 1:1 correlation between injection annealing of E1 and increasing C i in FZ-Si and sum of (Si i -O i )+C i as well observed reversible transformation of Si-AA12 and E1 onto (Si i -O i ) and their re-emission after annealing (Si i -O i ) allow to attribute these states to a isolated self-interstitial. Thermally stimulated capacitance data show negative U-properties of E1 predicted by theoretical calculations and supports this identification.