𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Self-interstitials and Frenkel pairs in electron-irradiated germanium

✍ Scribed by A. Carvalho; R. Jones; J. Goss; C. Janke; J. Coutinho; S. Öberg; P.R. Briddon

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
142 KB
Volume
401-402
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

✦ Synopsis

First principles calculations were used to study the structures and electrical levels of the self-interstitial in Ge. We considered the possibility of structural changes consequent with change in charge state and show these have important implications in the mobility and electrical activity of the defect. The theoretical model is compared to the results of low temperature electron irradiation in germanium reported in the literature.

📜 SIMILAR VOLUMES

Frenkel pair accumulation in ion- and el
Frenkel pair accumulation in ion- and electron-irradiated SiC
✍ V.I. Belko; A.Yu. Kuznetsov 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 135 KB

Classical MD simulations have been applied to study the Frenkel pair accumulation in electron-and ion-irradiated SiC for a wide temperature range 20-1200 K using different dose rates, so that ion flux affects significantly the resulting damage levels. Since the range of experimental dose rates is no

Self-interstitials and related defects i
Self-interstitials and related defects in irradiated silicon
✍ Yu.V. Gorelkinskii; Kh.A. Abdullin; B.N. Mukashev; T.S. Turmagambetov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 211 KB

Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si-AA12 defect. Si-AA12 reveals close correlations with DLTS E1 ¼ E c À0.39 eV minority trap. Impurity interstitials or selfinterstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i )