Self-interstitials and related defects i
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Yu.V. Gorelkinskii; Kh.A. Abdullin; B.N. Mukashev; T.S. Turmagambetov
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Article
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2009
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Elsevier Science
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English
β 211 KB
Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si-AA12 defect. Si-AA12 reveals close correlations with DLTS E1 ΒΌ E c Γ0.39 eV minority trap. Impurity interstitials or selfinterstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i )