HREM Investigations of the Agglomeration of Self-Interstitials in Silicon
β Scribed by Werner, P. ;Reiche, M. ;Heydenreich, J.
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 937 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0031-8965
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We present results of an ESR study of tetra-interstitial agglomerates (I 4 ) in silicon. The defects were formed upon annealing of electron-irradiated silicon samples pre-doped with hydrogen and reveal two ESR spectra, i.e., the B3 which is related to positive charge state of the defect and the NL51
Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity ΛG. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a cl