✦ LIBER ✦

Transport Parameters in the n-Type Moderately Doped Region of Silicon Devices at 300 K

✍ Scribed by H. Van Cong; S. Charar; S. Brunet; J. C. Martin

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effective electric field in the n-type m

✍ H. Van Cong; S. Brunet; S. Charar; S. Benet; C. Delseny; J. C. Martin 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB

Band-Gap Narrowing in n-Type Moderately

✍ H. Vancong 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 533 KB

Doping dependence of the internal quantu

✍ S.N. Biswas; S. Rakshit; A.N. Chakravarti 📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Influence of inhomogeneous distribution

✍ S. Rakshit; S.N. Biswas; A.N. Chakravarti 📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 321 KB