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Effective electric field in the n-type moderately doped region of silicon devices at 300 K

✍ Scribed by H. Van Cong; S. Brunet; S. Charar; S. Benet; C. Delseny; J. C. Martin

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Transport Parameters in the n-Type Moder

✍ H. Van Cong; S. Charar; S. Brunet; J. C. Martin 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB

Band-Gap Narrowing in n-Type Moderately

✍ H. Vancong 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 533 KB

Electrical band-gap narrowing in n- and

✍ H. Van Cong; S. Brunet 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 362 KB

Optical and electrical energy gaps of th

✍ H. Van Cong; S. Brunet; S. Charar; J.L. Birman; M. Averous 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 318 KB

Effective drift current densities in the

✍ H. Van Cong; S. Brunet 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 450 KB

Electrical band-gap narrowing in n- and

📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 120 KB