Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K

✍ Scribed by H. Van Cong; S. Brunet

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 362 KB
• Volume: 29
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(86)90003-1