Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300K: H. Van Cong and S. Brunet. Solid-St. Electron.29(9), 857 (1986)

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 120 KB
• Volume: 27
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(87)90119-3