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Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2

✍ Scribed by E. Kaminska; A. Piotrowska; J. Kossut; A. Barcz; R. Butkute; W. Dobrowolski; E. Dynowska; R. Jakiela; E. Przezdziecka; R. Lukasiewicz; M. Aleszkiewicz; P. Wojnar; E. Kowalczyk

Book ID: 108269471
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 298 KB
Volume: 135
Category: Article
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2005.04.002

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## Abstract ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated __p__ ‐type conductivity with the hole concentration of ∼5 · 10^19^ cm^–3^ for ZnO:As and ZnO:As:N on GaAs substra