✦ LIBER ✦

p-type ZnO and ZnMnO by oxidation of Zn(Mn)Te films

✍ Scribed by E. Przeździecka; E. Kamińska; E. Dynowska; W. Dobrowolski; R. Jakieła; Ł. Kłopotowski; M. Sawicki; M. Kiecana; J. Kossut

Book ID: 104557990
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 195 KB
Volume: 3
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200564646

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✦ Synopsis

Abstract

ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p ‐type conductivity with the hole concentration of ∼5 · 10^19^ cm^–3^ for ZnO:As and ZnO:As:N on GaAs substrates and ∼ 6 · 10^17^ cm^–3^ for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between samples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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