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Structural and electro-optical characteristics of Ga-doped ZnO films prepared by thermal oxidation of metallic Zn100-xGax films

✍ Scribed by Mohamed, S. H.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
491 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Ga‐doped ZnO thin films have been obtained by thermal oxidation of electron beam evaporated metallic Zn~100–x~Ga~x~ thin films. The structural, optical, and electrical resistivity of the oxidized films depend on Ga content. The value of oxidation temperature shifts to higher temperatures with increasing Ga content. After oxidation, polycrystalline ZnO phase is formed and no Ga~2~O~3~ peaks are found. The Ga content is found to affect transmittance strongly and the optical bandgap slightly. The optical bandgap values of the oxidized Ga‐doped films are comparable at higher oxidation temperatures. Depending on the Ga content, the electrical resistivity increases with increasing oxidation temperature. At 550 °C all the Ga‐doped films have electrical resistivity values around 10^5^ Ω cm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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