๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Transmission electron microscopy of cross sections of large scale integrated circuits

โœ Scribed by Tan-Tan Sheng; Chang, C.C.

Book ID
114592111
Publisher
IEEE
Year
1976
Tongue
English
Weight
861 KB
Volume
23
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Cross-sectional transmission electron mi
Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices
โœ Du, A. Y. ;Chu, Y. M. ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Wiley (John Wiley & Sons) ๐ŸŒ English โš– 429 KB

Cross-sectional transmission electron microscopy (XTEM) has been used to diagnose silicon LSI circuits and Josephson junction devices. For LSI circuits, some typical failure problems have been presented. For Nb-Si-Nb Josephson junction, microholes in the thin silicon layer have observed, and they ar

The preparation of cross-sectional speci
The preparation of cross-sectional specimens of thin poorly adhered scales for transmission electron microscopy
โœ P. Fox ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 250 KB ๐Ÿ‘ 1 views

## INTRODUCTION. The high temperature oxidation of alumina-and chromia-forming metals and alloys has been studied for many years. Although it is fairly easy to produce TEM cross-sections of the adherent scales formed on alloys containing reactive elements it has proved more difficult to cross-sect