✦ LIBER ✦

Cross-sectional characterization of integrated circuit structures by scanning electron microscopy

✍ Scribed by A. Vijay Kumar; G. H. Sarma; A. Prabhakar

Publisher: Springer
Year: 1987
Tongue: English
Weight: 674 KB
Volume: 6
Category: Article
ISSN: 0261-8028
DOI: 10.1007/bf01770907

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characterization of integrate

Electrical characterization of integrated circuits by scanning force microscopy

✍ C. Böhm; C. Roths; U. Müller; A. Beyer; E. Kubalek 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Applications of scanning electron micros

Applications of scanning electron microscopy in VLSI integrated circuits

✍ E. Kinsbron 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 131 KB

Characterization of zeolites by scanning

Characterization of zeolites by scanning electron microscopy

✍ K Jansen 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 168 KB

Characterization of modified polypropyle

Characterization of modified polypropylene by scanning electron microscopy

✍ Peter Poelt; Elisabeth Ingolic; Markus Gahleitner; Klaus Bernreitner; Wolfgang G 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 319 KB 👁 2 views

Characterization of coked catalysts by s

Characterization of coked catalysts by scanning electron microscopy

✍ J. van Doorn; P. Staugaard 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 106 KB

Cross-Sectional Scanning Tunneling Micro

Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAs

✍ Kazama, T. ;Yasunaga, F. ;Taniyasu, Y. ;Jia, A. ;Kato, Y. ;Kobayashi, M. ;Yoshik 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 213 KB 👁 2 views

Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the