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Transfer of semiconductor and oxide films by wafer bonding and layer cutting

✍ Scribed by Qin-Yi Tong; Li-Juan Huang; Ulich M. Gösele


Book ID
107452529
Publisher
Springer US
Year
2000
Tongue
English
Weight
394 KB
Volume
29
Category
Article
ISSN
0361-5235

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Fabrication of strained silicon on insulator (sSOI) substrates by wafer bonding and layer splitting is described in this paper. The sSi layer of 20 nm thickness is obtained on an 8 in. virtual substrate that consists of a plastically relaxed SiGe layer grown epitaxially on Si(0 0 1) by chemical vapo