Total reflection X-ray fluorescence: A technique for trace element analysis in materials

✍ Scribed by N.L. Misra; K.D. Singh Mudher

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 614 KB
• Volume: 45
• Category: Article
• ISSN: 0960-8974
• DOI: 10.1016/s0960-8974(02)00029-3

✦ Synopsis

Total Reflection

X-ray Fluorescence (TXRF) is a variant of Energy dispersive X-ray Fluorescence (EDXRF). It is a comparatively new method of trace element analysis and finds its application in various research areas of material development and processing. The versatility of TXRF is due to (i.) requirement of very less amount of sample (ii.) its capability to analyse very low concentrations and (iii.) capability of analysing surface and shallow layers up to a depth of few nanometers profiling up to few nanometers depth in materials.

Presence of impurities in semiconductor wafers affects the quality of the wafer significantly. Analysis of thin wafers is one of the several applications of TXRF where no other technique can compete with it. In the present paper the principle, advantages and some applications of this technique are briefly summarised.