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Toshiba GaN HEMT relegates GaAs


Book ID
104367999
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
41 KB
Volume
18
Category
Article
ISSN
0961-1290

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A complete empirical large-signal model for the GaAs-and GaN-based HEMTs is presented. Three generalized drain current I-V models characterized by the multi-bias Pulsed I-V measurements are presented along with their dependence on temperature and quiescent bias state. The new I-V equations dedicated