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Toshiba GaN beats GaAs for power FETs


Book ID
104368569
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
268 KB
Volume
19
Category
Article
ISSN
0961-1290

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Improved predistorter for GaAs FET power
✍ Wai Keung Lo; Wing Shing Chan; Chung Wai Li πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 78 KB

## Abstract Linearization of the gate‐source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. Β© 2004 Wiley Period