๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A novel GaAs Schottky-drain power FET for microwave application

โœ Scribed by Calviello, J.A.; Bie, P.R.; Pomian, R.J.; Cappello, A.


Book ID
114595460
Publisher
IEEE
Year
1985
Tongue
English
Weight
631 KB
Volume
32
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A novel low-cost high-conversion-efficie
โœ Young-Ho Suh; Kai Chang ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 82 KB

A novel simple microwave power detector using a GaAs MESFET is developed at 5.8 GHz. The FET detector has good noise characteristics, temperature stability, and dynamic range. Since the availability of FET is more flexible and the price is lower, the FET detector can be more cost effective than the