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Improved predistorter for GaAs FET power amplifier

✍ Scribed by Wai Keung Lo; Wing Shing Chan; Chung Wai Li

Book ID
102516668
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
78 KB
Volume
40
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

Linearization of the gate‐source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. Β© 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 211–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11331

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## Abstract A novel programmable MMIC predistortion circuit as an input stage of a broadband power amplifier (PA) is proposed and designed. By varying its reference voltage, one can adjust the magnitude of gain expansion and negative phase deviation to compensate the typical nonlinearities of the f