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K-Band High-Power GaAs FET Amplifiers

✍ Scribed by Jun'ichi Sone; Takayama, Y.


Book ID
114657666
Publisher
IEEE
Year
1981
Tongue
English
Weight
778 KB
Volume
29
Category
Article
ISSN
0018-9480

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## Abstract Linearization of the gate‐source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. Β© 2004 Wiley Period