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Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs

✍ Scribed by T. Okayama; Mulpuri V. Rao

Book ID: 108271759
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 394 KB
Volume: 54
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2009.10.006

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