## Abstract The design and fabrication of a highβefficiency inverse classβF power amplifier using a 10βW gallium nitride (GaN) highβelectron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highβefficiency operation. The measurement
β¦ LIBER β¦
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
β Scribed by Paidi, V.; Shouxuan Xie, ; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, A.; DenBaars, S.P.; Mishra, U.K.; Long, S.; Rodwell, M.J.W.
- Book ID
- 120942422
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 723 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0018-9480
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