## Abstract The design and fabrication of a highβefficiency inverse classβF power amplifier using a 10βW gallium nitride (GaN) highβelectron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highβefficiency operation. The measurement
β¦ LIBER β¦
Development of ultra wideband, high efficiency, distributed power amplifiers using discrete GaN HEMTs
β Scribed by Lin, S.; Eron, M.; Fathy, A.E.
- Book ID
- 114442384
- Publisher
- The Institution of Engineering and Technology
- Year
- 2009
- Tongue
- English
- Weight
- 555 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1751-858X
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