## Abstract The design and fabrication of a highβefficiency inverse classβF power amplifier using a 10βW gallium nitride (GaN) highβelectron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highβefficiency operation. The measurement
Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
β Scribed by Saito, W.; Domon, T.; Omura, I.; Kuraguchi, M.; Takada, Y.; Tsuda, K.; Yamaguchi, M.
- Book ID
- 111950126
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 148 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0741-3106
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## This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-m gate length and 300-m gate width AlGaN/ GaN HEMT. The 1 dB compression point o
The design of a broadband high-efficiency class-E power amplifier (PA) using a 0.8-m PHEMT device is presented. In order to achieve broadband operation, a T-transform output-load network is used. Power-added efficiency (PAE) greater than 50% is achieved over a frequency bandwidth of 49%. The simulat