## Abstract This article reports a highly efficient 1βGHz classβE power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien
A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency [Student Designs]
β Scribed by M. Boers; A. Parker; N. Weste
- Book ID
- 124165123
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 972 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1527-3342
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