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A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

✍ Scribed by Yifeng Wu; Jacob-Mitos, M.; Moore, M.L.; Heikman, S.

Book ID: 111950127
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 422 KB
Volume: 29
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2008.2000921

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