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1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

✍ Scribed by X.L. Wang; T.S. Cheng; Z.Y. Ma; G.X. Hu; H.L. Xiao; J.X. Ran; C.M. Wang; W.J. Luo

No coin nor oath required. For personal study only.

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1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39&#xa0;W at 8&#xa0;GHz