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Titanium nitride films prepared by ion implantation

โœ Scribed by P.A. Chen; T.T. Yang


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
88 KB
Volume
81
Category
Article
ISSN
0040-6090

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In this article, the results obtained on 5lms deposited by the metalorganic chemical vapor deposition (MOCVD) method using monomethylhydrazine (CH 3 N 2 H 3 , MMH) as a nitrogen source are described. A general atmospheric CVD apparatus with a fused quartz reaction tube and an external heating furnac