Boron Nitride Films Prepared by MOCVD

✍ Scribed by Katsumitsu Nakamura; Tomoaki Sasaki

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 162 KB
• Volume: 154
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.8818

✦ Synopsis

In this article, the results obtained on 5lms deposited by the metalorganic chemical vapor deposition (MOCVD) method using monomethylhydrazine (CH 3 N 2 H 3 , MMH) as a nitrogen source are described. A general atmospheric CVD apparatus with a fused quartz reaction tube and an external heating furnace are used. Experimental conditions are as follows: growth temperature range, 400+12003C; MMH 6ow rate range, 0.1+8.0 ml/min; triethylboron (TEB) 6ow rate, 1.0 ml/min; MMH/TEB range, 0.1+8.0. Boron nitride characteristic spectra are observed in the temperature range 400 to 11003C. The composition (N/B) of the 5lms deposited at 10003C increases steeply from N/B ‫؍‬ 0.01 at MMH/TEB ‫؍‬ 0.1 to 0.69 at 0.2, and then stoichiometric boron nitride deposits over 1.0 of MMH/TEB. The crystal structure of the 5lms is interesting at present, but the crystallinity is inferior to that obtained when ammonia is used as a nitrogen source. It will be in6uenced considerably by the electronic con5guration based on the molecular structure of methylhydrazine. When methylhydrazine is used, we expect to grow the 5lms at a lower deposition temperature. Until now, however, no particular change in the deposition temperature has been recognized.