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Tin impurity atoms in vacuum deposited amorphous silicon

โœ Scribed by Nasredinov, F. S. ;Andreev, A. A. ;Kurmantaev, A. N. ;Regel, A. R. ;Seregin, P. P.


Book ID
105377622
Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
315 KB
Volume
83
Category
Article
ISSN
0031-8965

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The existence of small bond angles (like those of triangles and squares) in amorphous silicon networks were studied by the tight-binding molecular dynamics method, by analyzing the statistical data of Si -Si-Si fragments inside large molecules, and also by the Reverse Monte-Carlo simulation method.