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Solid phase epitaxial growth anisotropy of vacuum-deposited amorphous silicon

โœ Scribed by Kaverina, I. G. ;Korobtsov, V. V. ;Zavodinskii, V. G. ;Zotov, A. V.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
580 KB
Volume
82
Category
Article
ISSN
0031-8965

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Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit