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Unusual atomic arrangements in amorphous silicon

✍ Scribed by S. Kugler; K. Kohary; K. Kádas; L. Pusztai

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
121 KB
Volume
127
Category
Article
ISSN
0038-1098

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✦ Synopsis

The existence of small bond angles (like those of triangles and squares) in amorphous silicon networks were studied by the tight-binding molecular dynamics method, by analyzing the statistical data of Si -Si-Si fragments inside large molecules, and also by the Reverse Monte-Carlo simulation method. The influence of small bond angles on the electronic density of states was revealed.

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