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Time resolved CoSi2 reaction in presence of Ti and TiN cap layers

✍ Scribed by A. Alberti; R. Fronterré; F. La Via; E. Rimini

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
130 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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✦ Synopsis

In this work we study the phase transition of Co/poly-Si layers capped with Ti or TiN films. Silicide reaction has been performed by isothermal annealing in the temperature range between 420 and 510 • C and studied by measuring the sheet resistance during time. The time interval associated to the CoSi-CoSi 2 phase transition has been extracted as a function of the cap layer and the annealing temperature. The presence of the Ti cap systematically reduces the rate of CoSi 2 formation with respect to the sample with TiN. It has been found that the cap type has an impact on the pre-exponential factor of the growth time but it does not affect the activation energy. As an effect, the silicide capped with Ti has a flat interface with the substrate.

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