Formation of C54 TiSi2 in a cosputtered (Ti+Si) blanket film in the presence of a TiN capping layer

✍ Scribed by Joshua Pelleg; Y. Shor

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 607 KB
• Volume: 69
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00230-2

✦ Synopsis

Formation of C54 TiSi was investigated in cosputtered (Ti 1 Si) films with and without a TiN capping layer 2 following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti Si regardless if a 5 3 TiN overlayer was present. Free energy calculations indicate the preference of Ti Si formation as the first 5 3 phase. C54 TiSi started to form at lower temperatures in the specimens capped with TiN. Its formation also 2 occurred at shorter annealing times at some given temperature. The influence of a TiN capping layer on enhancing C54 TiSi formation is attributed to the stress induced by this layer into the (Ti 1 Si) film. The X-ray 2 diffraction (XRD) method was used to evaluate the stress in the TiN film. Free energy values also indicate that C54 TiSi formation is favored in capped samples.

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