๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Threshold-voltage temperature drift in ion-implanted MOS transistors

โœ Scribed by Bang-Sup Song; Gray, P.R.


Book ID
114594071
Publisher
IEEE
Year
1982
Tongue
English
Weight
771 KB
Volume
29
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Adjustment of threshold voltage of MOS d
โœ G.S. Virdi; S. Singh; B.C. Pathak; W.S. Khokle ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift/k VT. The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using WHB potential. The junction de