𝔖 Bobbio Scriptorium
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Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

✍ Scribed by Nathanson, H.C.; Jund, C.; Grosvalet, J.


Book ID
114589317
Publisher
IEEE
Year
1968
Tongue
English
Weight
748 KB
Volume
15
Category
Article
ISSN
0018-9383

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We investigate the behavior of silicon photomultipliers (SiPMs) at low temperatures: I-V characteristics, breakdown voltage, dark noise, afterpulsing, crosstalk, pulse shape, gain and photon detection efficiency are studied as a function of temperature in the range 50 K o T o 320 K. We discuss our m