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Threshold voltage in short-channel MOS devices

โœ Scribed by Viswanathan, C.R.; Burkey, B.C.; Lubberts, G.; Tredwell, T.J.


Book ID
114595151
Publisher
IEEE
Year
1985
Tongue
English
Weight
928 KB
Volume
32
Category
Article
ISSN
0018-9383

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Adjustment of threshold voltage of MOS d
โœ G.S. Virdi; S. Singh; B.C. Pathak; W.S. Khokle ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift/k VT. The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using WHB potential. The junction de