Three-dimensional Monte Carlo simulation of sputtered atom transport in the process of ion-plasma sputter deposition of multicomponent thin films

✍ Scribed by P.K. Petrov; V.A. Volpyas; R.A. Chakalov

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 197 KB
• Volume: 52
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00326-1

✦ Synopsis

An algorithm for Monte Carlo simulation of sputtered atom transport during ion-plasma sputtering was developed. The experimentally determined initial energy distribution of sputtered atoms, the influence of the background gas mixture and the real equipment geometry of the magnetron sputtering system were taken into account. To describe the collision between sputtered atoms and background gas atoms, the Firsov interatomic potential with Nikulin screen function was used. In simulations, the equipment geometry and deposition conditions were chosen corresponding to those of DC magnetron deposition of Cu and YBa Cu O \V thin films. The spatial, energetic and angular distribution of sputtered atoms on the substrate surface, target and chamber's walls were calculated. The obtained results are in good agreement with experimental ones. The presented simulation procedure is useful in daily research work to choose the optimal deposition conditions for both on-and off-axis magnetron deposition systems. 1999 Elsevier Science Ltd. All rights reserved.