✦ LIBER ✦

Monte Carlo simulation of argon atoms transport during deposition of W thin films by RF-dc coupled magnetron sputtering

✍ Scribed by PK Petrov; VA Volpyas; EK Hollmann; T Tanaka; K Kawabata

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 205 KB
Volume: 48
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(97)00079-1

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✦ Synopsis

RFpower and DC bias have been simultaneously applied to the target in a conventional magnetron sputtering system in order to control the growth kinetics of W thin films using argon gas for sputtering. A Monte Carlo simulation based on physical models of ion-plasma sputtering was carried out to study the dependence of Ar concentration in the tungsten film on the parameters of the discharge, and on the flow of argon atoms onto the substrates. An energy of 180 eV was proposed as a threshold for accommodating Ar atoms in growing W

films.

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✍ P.K. Petrov; V.A. Volpyas; R.A. Chakalov 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 197 KB

An algorithm for Monte Carlo simulation of sputtered atom transport during ion-plasma sputtering was developed. The experimentally determined initial energy distribution of sputtered atoms, the influence of the background gas mixture and the real equipment geometry of the magnetron sputtering system