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Three dimensional (BA, SR) TIO3 stack capacitors for dram application

โœ Scribed by Nagel, N.; Costrini, G.; Lian, J.; Athavale, S.; Economikos, L.; Baniecki, J.; Wise, M.

Book ID
111989169
Publisher
Taylor and Francis Group
Year
2001
Tongue
English
Weight
463 KB
Volume
38
Category
Article
ISSN
1058-4587

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## Abstract In this article, the potential feasibility of integrating BST films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO~2~ thin film buffer layer is suggested. TiO~2~ as buffer layer is grown onto Si substrate by atomic layer deposition and the coplanar IDC on Ba~x~S