A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSix storage nodes for Gb-scale DRAMs

✍ Scribed by Yamamichi, S.; Lesaicherre, P.; Yamaguchi, H.; Takemura, K.; Sone, S.; Yabuta, H.; Sato, K.; Tamura, T.; Nakajima, K.; Ohnishi, S.; Tokashiki, K.; Hayashi, Y.; Kato, Y.; Miyasaka, Y.; Yoshida, M.; Ono, H.

• Book ID: 114536874
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 226 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.595934