Thin polycrystalline SiGe films by aluminium-induced layer exchange
β Scribed by Robert Lechner; Michael Buschbeck; Mario Gjukic; Martin Stutzmann
- Book ID
- 104556559
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 395 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
This paper investigates the crystallization of amorphous Si by using Al below eutectic temperature as a function of temperature on glass substrate. The crystalline structure from Raman spectroscopy represents amorphous phase of films perfectly changed to polycrystalline phase at the 450 1C. The rati
## Abstract The aluminumβinduced crystallization (AIC) of amorphous silicon germanium (aβSiGe) was investigated in bilayer structure of aluminum (Al) and aβSiGe at the eutectic temperature of AlβGe system (420βΒ°C) or higher temperature. Due to energy dispersive Xβray spectroscopy (EDX) measurements