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Thin-film transistors from very low temperature polycrystalline Si on glass substrates

โœ Scribed by W. Schmolla; J. Diefenbach; G. Blang; B. Ocker; W. Senske


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
468 KB
Volume
32
Category
Article
ISSN
0038-1101

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Stacked gate insulator of photooxide and
โœ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good