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Thickness dependent integrity of gate oxide on SOI

โœ Scribed by Mikio Tsujiuchi; Toshiaki Iwamatsu; Hideki Naruoka; Hiroshi Umeda; Takashi Ipposhi; Shigeto Maegawa; Yasuo Inoue

Book ID
118569361
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
191 KB
Volume
216
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES

Gate oxide integrity dependence on subst
Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
โœ F. Bonoli; P. Godio; G. Borionetti; R. Falster ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 101 KB

Gate oxide integrity (GOI) has been investigated for a wide range of oxide thicknesses, from 5 to 50 nm. Silicon substrates containing voids of number densities along with defect-free (perfect) polished and epitaxial wafers were tested. Oxide reliability was monitored by linear ramped field tests at