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Thickness dependence of stress-induced leakage currents in silicon oxide

โœ Scribed by Runnion, E.F.; Gladstone, S.M.; Scott, R.S., Jr.; Dumin, D.J.; Lie, L.; Mitros, J.C.


Book ID
114536861
Publisher
IEEE
Year
1997
Tongue
English
Weight
150 KB
Volume
44
Category
Article
ISSN
0018-9383

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Stress induced leakage current in ultra-
โœ A. Scarpa; G. Ghibaudo; G. Ghidini; G. Pananakakis; A. Paccagnella ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 216 KB

Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati