𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation

✍ Scribed by Donovan, E.P.; Spaepen, F.; Turnbull, D.; Poate, J.M.; Jacobson, D.C.

Book ID
121444197
Publisher
Cambridge University Press
Year
1983
Weight
323 KB
Volume
27
Category
Article
ISSN
0272-9172

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Ion Implantation and Synthesis of Materi
Ion Implantation and Synthesis of Materials || Crystallization and Regrowth of Amorphous Si
✍ Nastasi, Michael; Mayer, James W. πŸ“‚ Article πŸ“… 2006 πŸ› Springer Berlin Heidelberg 🌐 German βš– 390 KB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant