This paper reports on the fabrication and characterization of InGaP/GaAs/InGaP ฮด-doped double heterojunction bipolar transistors (ฮด-DHBTs) with an InGaP passivation layer. Effects of passivation layer thickness on the performance of the studied devices were investigated. Various passivation layer th
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures
โ Scribed by C. Pelosi; G. Attolini; M. Bosi; C. Frigeri; M. Bersani; D. Giubertoni; L. Vanzetti; N. Musayeva
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 199 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0232-1300
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๐ SIMILAR VOLUMES
In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap
In this paper, the base/collector current characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) for Volterra analysis are extracted using the low-frequency harmonic-power measurements with the associated phase-polarity information. The determining equations are derived via a system
## Abstract Application of InGaAs/InGaP doubleโheterostructure (DH) lasers increases the band offset between the cladding layer and the active layer more than the use of conventional 1.3 ยตm InGaAsP/InP lasers. As a first step in realizing 1.3 ยตm InGaP/InGaAs/InGaP DH lasers, we proposed InGaP latti
## Abstract This paper describes the DC and smallโsignal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitterโbase designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff a