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Parameter extraction of InGaP/GaAs HBT nonlinear current characteristics for Volterra series analysis

✍ Scribed by Chien-Chang Huang; Kuan-Yu Chen

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
108 KB
Volume
47
Category
Article
ISSN
0895-2477

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✦ Synopsis

In this paper, the base/collector current characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) for Volterra analysis are extracted using the low-frequency harmonic-power measurements with the associated phase-polarity information. The determining equations are derived via a systematic approach in order to acquire the general expressions to any nonlinear orders. The simulations and experiments of two-tone intermodulation distortions for an HBT device verify the extracted results.

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