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Thermodynamic study of molecular beam epitaxial growth of InGaAs/GaAs strained layer superlattices

โœ Scribed by M.R. Bruni; A. Lapiccirella; G. Scavia; M.G. Simeone; S. Viticoli; N. Tomassini

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
1003 KB
Volume
210
Category
Article
ISSN
0040-6031

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## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri